Product details
Product Overview
The RFSP-8000-12000-100W is a multi-octave high-power GaN amplifier operating from 8 to 12 GHz (usable 7.8–12.3 GHz) with a minimum saturated output power of 100 W. Chip-and-wire GaN construction delivers state-of-the-art power performance with an excellent power-to-volume ratio in a compact 160 × 120 × 25 mm chassis.
Built-in control and protection circuits provide over-temperature and over-current alarms with automatic shutdown and recovery, making the module a robust building block for demanding RF systems.
Key Features
Small size and light weight (2.0 kg)
Instantaneous ultra-broadband coverage
50 Ω matched input and output
Built-in control and protection circuits with alarms
GaN chip-and-wire technology
Product Information
| Model | RFSP-8000-12000-100W |
| Product Category | RF Power Amplifiers |
| Operating Frequency | 8–12 GHz (usable 7.8–12.3 GHz) |
| Saturated Output Power | ≥ 100 W minimum (typ. 160 W) |
| Power Gain @ PSAT | ≥ 50 dB, flatness ±1 dB |
| Power Supply | +28 VDC, quiescent 8.1 A |
| RF Connectors | SMA Female (input) / N Female (output) |
| Dimensions / Weight | 160 × 120 × 25 mm / 2.0 kg |
| Protection | Over-temperature (>85 °C) and over-current (IDD > 20 A) shutdown with auto-recovery |
| Applications | Jamming & ECM systems, EMC test systems, general test and measurement |
| Supply | Available for project-based configuration and quotation |
Specifications subject to change without prior notice. Contact RFsatellite for the latest data, test curves and project-based configuration.
